Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
GATE
3 DRAIN
DRAIN CURRENT 5.0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE
2 SOURCE
Features
:
- Simple Drive Requirement.
- Super High Density Cell Design for Extremely Low RDS(ON).
1. GATE 2. DRAIN 3. SOURCE
SOT-89
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (T A =25°C ) Maximum Junction-Ambient 3 Operating Junction Temperature Range Storage Temperature Range Note 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on FR4...