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WTM2310A
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
3 DRAIN
DRAIN CURRENT 5.0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE
2 SOURCE
Features:
* Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON).
1
2
3
1. GATE 2. DRAIN 3. SOURCE
SOT-89
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (T A =25°C ) Maximum Junction-Ambient 3 Operating Junction Temperature Range Storage Temperature Range Note 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on FR4 board, t ≤10sec.
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WTM2310A Datasheet
