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WTM3906 Datasheet PDF

Weitron Technology WTM3906

EPITAXIAL PLANAR TRANSISTOR

Part No. WTM3906
Datasheet WTM3906 Download
Manufacturer
Weitron Technology
Description EPITAXIAL PLANAR TRANSISTOR
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WTM3906 datasheet page 1 preview

FEATURES

: * Collector-Emitter Voltage:VCEO=-40V * Complementary to WTM3904 SOT-89

MECHANICAL DATA

: * Case : Molded Plastic

ABSOLUTE MAXIMUM RATINGS

(TA=25ºC Unless Otheerwise Noted) Rating Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -40 -40 -5.0 -200 1.0 150 -55 to +150 Unit V V V mA W ˚C ˚C Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C Junction Temperature Storage Temperature WEITRON 1/4 28-Dec-05 WTM3906

ELECTRICAL CHARACTERISTICS

Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=-10µA, IC=0 Collector Cut-Off Current VCE=-30V, VBE=-3.0V ON CHARACTERISTICS1 DC Current Gain VCE=-1.0V, IC=-0.1mA VCE=-1.0V, IC=-1.0mA VCE=-1.0V, IC=-10mA VCE=-1.0V, IC=-50mA VCE=-1.0V, IC=-100mA Collector-Emitter Saturation Voltage IC=-10mA, IB=-1.0mA IC=-50mA, IB=-5.0mA Collector-Emitter Saturation Voltage IC=-10mA, IB=-1.0mA IC=-50mA, IB=-5.0mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=-20V, IC=-10mA, f=100MHz Output Capacitance VCB=-5.0V, IE=0, f=1.0MHz Note1.
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