Weitron Technology WTM772
EPITAXIAL PLANAR TRANSISTOR
| Part No. | WTM772 |
|---|---|
| Datasheet | WTM772 Download |
| Manufacturer |  Weitron Technology |
| Description | EPITAXIAL PLANAR TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) (1) Base Current Total Device Dissipation TA =25 C (2) Total Device Dissipation Tc=25 C (3) Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) IC (Pulse) I B (Pulse) PD PD Tj Tstg PNP/WTM772 NPN/WTM882 30 -30 -40 40 -5.0 5.0 3.0 -3.0 -7.0 -0.6 0.5 4 150 -55 to +150 7.0 0.6 Unit Vdc Vdc Vdc Adc Adc Adc W W C C Device Marking WTM772=B772 , WTM882=D882ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100/100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100/100 uAdc, IC=0) Collector Cutoff Current (VCE= -30/30 Vdc, I B =0) Collector Cutoff Current (VCB= -40/40 Vdc, IE=0) Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I C=0) NOTE: 1. Pulse Test: PW 350us, duty cycle 2% 2. Tested in free air condition, without heat-sink. 3.
