WTP882 Datasheet | Weitron Technology

WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) Rating Symbol Collector-Emitter Voltage Collector-B ase Voltage Emitter-B ase Voltage Collector Current (DC) Collector Current (Pulse)1 B ase Current Total Device Dissipation Tc=25 C TA=25°C Junction Temperature Storage, Temperature VCEO VCB O VEB O I C(DC) IC (Pulse) IB (Pulse) PD Tj Tstg PNP/WTP772 NPN/WTP882 -30 -40 -5.0 -3.0 -7.0 -0.6 10 1.4 150 30 40 5.0 3.0 Unit 7.0 0.6 Vdc Vdc Vdc Adc Adc Adc W C C -55 to +150 Device Marking WT P 7 7 2 =B 7 7 2 , WT P 8 8 2 =D8 8 2 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C= -10/ 10 m Adc, I B =0) Collector-B ase B reakdown Voltage (I C = -100/ 100 µAdc, I E =0) Emitter-B ase B reakdown Voltage (I E = -100/ 100 µAdc, I C =0) Collector Cutoff Current (VCE = -30/ 30 Vdc, I B =0) Collector Cutoff Current (VCB = -40/ 40 Vdc, I E =0) Emitter Cutoff Current (VEB = -6.0/ 6.0Vdc, I C =0) N OT E : 1 . P W 3 5 0 us , duty cycle 2 % V(B R)CEO -30/ 30 V(B R)CB O -40/ 40 V(B R)EB O -5.0/ 5.0 I CE0 I CB O I EB O - -1.0/ 1.0 -1.0/ 1.0 -1.0/ 1.0 Vdc Vdc Vdc u Adc u Adc u Adc WEITRON http://.weitron..tw .Data Sheet.in WTP772 WTP882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 m Adc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2m Adc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2m Adc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 m Adc, VCE=-5.0/5.0 Vdc, f=10MHz) h FE (1) h FE (2) VCE(sat) VBE(sat) f T 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 -...