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MCR100-6/MCR100-8
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
P b Lead(Pb)-Free
A
SCRs 0.8 A RMS 400/600 Voltage
G C
1.Cathode 2.Gate 3.Anode
1 2
3
TO-92
Maximum Ratings (TA=25°C unless otherwise noted)
Rating Repetitive Peak Off-stage Voltage Collector-Base Voltage Junction Temperature Range Storage Temperature Range Symbol VDRM ITRMS TJ Tstg MCR100-6 400 0.8 MCR100-8 600 Unit V A °C °C
+150 -55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics On State Voltage(1) ITM = 1A Gate Trigger Voltage VAK = 7V
Peak Repetitve Forward and Reverse Blocking Voltage IDRM = 10μA , VMAX = 10V MCR100-6 MCR100-8 Peak Forward or Reverse Blocking Current
Symbol VTM VGT
Min -
Max 1.7 0.
MCR100-6 Datasheet
