Datasheet Details
| Part number | W364M72V-XSBX |
|---|---|
| Manufacturer | White Electronic Designs Corporation |
| File Size | 527.54 KB |
| Description | 64Mx72 Synchronous DRAM |
| Datasheet |
 W364M72V-XSBX Datasheet
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General Description
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 512M bits.
Each chip is internally configured as a quadbank DRAM with a synchronous interface.
Each of the chip’s 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits.
Key Features
- High Frequency = 100, 125MHz Package:.
- 219 Plastic Ball Grid Array (PBGA), 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 8,192 refresh cycles Commercial, Industrial and Military Temperature Ranges Organized as 64M x 72 Weight: W364M.