WV3HG2128M72EEU-AD4 - 2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED

Datasheet Summary

Description

The WV3HG2128M72EEU is a 2x128Mx72 Double Data Rate DDR2 SDRAM high density module.

This memory module consists of eighteen 128Mx8 bit stacked BGA with 8 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate.

200 Pin SO-DIMM PCB 30.0

Features

200-pin, dual in-line memory module (SO-DIMM) Support ECC error detection and correction Fast data transfer rates: PC2-6400.
, PC2-5300.
, PC2-4200 and PC2-3200 VCC = VCCQ = 1.8V ±0.1V 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Differential clock inputs (CK, CK#) Multiple internal device banks for concurrent operation Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 an.

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Datasheet Details

Part number	WV3HG2128M72EEU-AD4
Manufacturer	White Electronic Designs
File Size	218.46 KB
Description	2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED
Datasheet	WV3HG2128M72EEU-AD4 Datasheet
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White Electronic Designs WV3HG2128M72EEU-AD4 ADVANCED* 2GB – 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL FEATURES 200-pin, dual in-line memory module (SO-DIMM) Support ECC error detection and correction Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 VCC = VCCQ = 1.8V ±0.1V 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Differential clock inputs (CK, CK#) Multiple internal device banks for concurrent operation Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh Gold edge contacts Dual Rank RoHS compliant Package option www.DataSheet4U.

Published: Oct 13, 2009 |