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WV3HG264M64EEU-D4 - 1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED

Datasheet Summary

Description

The WV3HG264M64EEU is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density SO-DIMM.

This memory module consists of sixteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate.

This product is under development, is not qualified or characteri

Features

  • 200-pin, dual in-line memory module (SO-DIMM) Fast data transfer rates: PC2-6400.
  • , PC2-5300.
  • , PC2-4200 and PC2-3200 Utilizes 800.
  • , 667.
  • , 533 and 400 Mb/s DDR2 SDRAM components VCC = 1.8V ±0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Pro.

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Datasheet Details

Part number WV3HG264M64EEU-D4
Manufacturer White Electronic Designs
File Size 235.39 KB
Description 1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED
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White Electronic Designs WV3HG264M64EEU-D4 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES 200-pin, dual in-line memory module (SO-DIMM) Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components VCC = 1.8V ±0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh www.
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