WNM2046 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
- Part: WNM2046
- Manufacturer: Will Semiconductor
- Size: 1.02 MB
Other WNM2046 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
WNM2046 | N-Channel MOSFET |
WillSEMI |
WNM2046B | MOSFET |
|
WillSEMI |
WNM2046C | MOSFET |
WNM2046 Description
G S D Descriptions DFN1006-3L The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.