WNM2046 - N-Channel MOSFET

Will Semiconductor

General Description

The WNM2046 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package DFN1006-3L.

📥 Download Datasheet

WNM2046 n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNM2046
Manufacturer	Will Semiconductor
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	WNM2046 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WNM2046	N-Channel MOSFET	Kexin
WNM2046B	MOSFET	WillSEMI
WNM2046C	MOSFET	WillSEMI
WNM2016	N-Channel Power MOSFET	TY Semiconductor
WNM2016	N-Channel MOSFET	Kexin

Other Datasheets by Will Semiconductor

Part Number	Description
WNM2016	N-Channel MOSFET
WNM2020	N-Channel MOSFET
WNM2021	N-Channel MOSFET
WNM2024	N-Channel MOSFET
WNM2029	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046 Http://www.sh-willsemi.com G S D Descriptions DFN1006-3L The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046 is Pb-free.