WNM2306 Datasheet N-Channel Power MOSFET

Manufacturer: Will Semiconductor

Datasheet Details

s The WNM2306 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion and power switch applications.

WNM2306 N-Channel, 20V, 3.2A, Power MOSFET WNM2306 Http://www.willsemi.com V(BR)DSS 20 Rds(on) (Max.

m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.

SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT6.
WT6.
= Device Code = Month (A~Z) Marking.