Datasheet Details
| Part number | WNM2306 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 99.93 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 WNM2306 Datasheet
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| Part number | WNM2306 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 99.93 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
WNM2306 Datasheet
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The WNM2306 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.