WNM4017 Overview
The WNM4017 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4017 is in pliance with RoHS.
WNM4017 Key Features
- Trench Technology
- Supper high density cell design
- Low ON resistance
- Low Threshold Voltage
- Package PDFN5X6-8L