WNM4017 Key Features
- Trench Technology
- Supper high density cell design
- Low ON resistance
- Low Threshold Voltage
- Package PDFN5X6-8L
- Part: WNM4017
- Manufacturer: Will Semiconductor
- Size: 628.24 KB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNM4001 | Small Signal N-Channel MOSFET |
| WNM4002 | N-Channel MOSFET |
| WNM4006 | N-Channel MOSFET |
| WNM4153 | N-Channel MOSFET |
| WNM07N60 | N-Channel MOSFET |
WNM4017 Description
The WNM4017 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4017 is in pliance with RoHS.