WNM4153 Datasheet PDF (N-Channel MOSFET) | Download Will Semiconductor WNM4153

WNM4153 - N-Channel MOSFET

Description

The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion applications.

Standard Product WNM4153 is Pb-free.

Features

Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 WNM4153 Http://www. willsemi. com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3F 12 N3 = Device Code F = Month Marking.

Datasheet Details

Part number	WNM4153
Manufacturer	Will Semiconductor
File Size	322.05 KB
Description	N-Channel MOSFET
Datasheet	WNM4153 Datasheet
Additional preview pages of the WNM4153 datasheet.

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Full PDF Text Transcription

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WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 RDS(on) (Ω) 0.220 @ VGS=4.5V 0.260 @ VGS=2.5V 0.320 @ VGS=1.8V Descriptions The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WNM4153 is Pb-free. Features Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 WNM4153 Http://www.willsemi.

Published: Apr 30, 2017 |