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WNMD2154A - 20V 820mA Dual N-Channel Power MOSFET

General Description

The WNMD2154A is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • SOT-563 D1 G2 S2 6 5 4 1 2 3 S1 G1 D2 Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-563.

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Datasheet Details

Part number WNMD2154A
Manufacturer Will Semiconductor
File Size 736.03 KB
Description 20V 820mA Dual N-Channel Power MOSFET
Datasheet download datasheet WNMD2154A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2154A Dual N-Channel, 20V, 820mA, Power MOSFET WNMD2154A Http://www.sh-willsemi.com VDS (V) Max RDS(on) (mΩ) 550 @ VGS=4.5V 710 @ VGS=3.1V 20 900 @ VGS=2.5V 1400 @ VGS=1.8V ESD Rating:2000V HBM Description The WNMD2154A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2154A is Pb-free.