Datasheet4U Logo Datasheet4U.com

WNMD3014 - Dual N-Channel MOSFET

Description

The WNMD3014 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L.

📥 Download Datasheet

Datasheet Details

Part number WNMD3014
Manufacturer Will Semiconductor
File Size 113.97 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD3014 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WNMD2078 MOSFET WillSEMI
WNMD2090 MOSFET WillSEMI
WNMD2176 MOSFET WillSEMI
WNMD2178 MOSFET WillSEMI
WNMD2180 MOSFET WillSEMI

Other Datasheets by Will Semiconductor

Part Number Description
WNMD2153 Dual N-Channel MOSFET
WNMD2154 Dual N-Channel MOSFET
WNMD2154A 20V 820mA Dual N-Channel Power MOSFET
WNMD2155 Dual N-Channel MOSFET
WNMD2156 Dual N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
WNMD3014 Dual N-Channel, 30V, 6.8A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.023@ VGS=10V 0.033@ VGS=4.5V WNMD3014 Http//:www.willsemi.com Descriptions The WNMD3014 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD3014 is Pb-free and Halogen-free. Features SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc.
Published: |