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WNMD6003 - Dual N-Channel MOSFET

Description

The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-563.

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Datasheet Details

Part number WNMD6003
Manufacturer Will Semiconductor
File Size 1.50 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD6003 Datasheet

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Full PDF Text Transcription

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WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD6003 is Pb-free and Halogen-free. WNMD6003 Http//:www.sh-willsemi.com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-563 Applications  Driver for Relay, Solenoid, Motor, LED etc.
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