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WCM2001 - MOSFET

Datasheet Summary

Description

The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Standard Product WCM2001 is Pb-free.

Features

  • z Trench Technology z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with DFN2x2-6L.

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Datasheet Details

Part number WCM2001
Manufacturer WillSEMI
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet WCM2001 Datasheet
Additional preview pages of the WCM2001 datasheet.

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Full PDF Text Transcription

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WCM2001 N- and P-Channel Complementary, 20V, MOSFET V(BR)DSS N-Channel 20 V P-Channel -20 V RDS(on) Typ. ( mȍ) 180 @ 4.5V 225 @ 2.5V 280 @ 1.8V 85 @ -4.5V 110 @ -2.5V 150 @ -1.8V Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product WCM2001 is Pb-free. WCM2001 Http://www.willsemi.com D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) Features z Trench Technology z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with DFN2x2-6L.
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