WNM03301D Description
The WNM03301D is N-Channel enhancement MOS Field Effect Transistor. Uses advanced Split Gate Trench and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM03301D Key Features
- Split Gate Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Package PDFN3.3X3.3-8L