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WNM03301D - Single N-Channel 30V 36A Power MOSFET

General Description

The WNM03301D is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced Split Gate Trench and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • PDFN3.3X3.3-8L D D D D 8 7 6 5 D 1 2 3 4 S S S G Internal schematic diagram.
  • Split Gate Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Package PDFN3.3X3.3-8L.

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Datasheet Details

Part number WNM03301D
Manufacturer WillSEMI
File Size 558.42 KB
Description Single N-Channel 30V 36A Power MOSFET
Datasheet download datasheet WNM03301D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM03301D Single N-Channel, 30V, 36A, Power MOSFET WNM03301D http://www. omnivision-group.com VDS (V) 30 Max. RDS(on) (mΩ) 5.4 @VGS=10V 9.1 @VGS=4.5V Description The WNM03301D is N-Channel enhancement MOS Field Effect Transistor. Uses advanced Split Gate Trench and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM03301D is Pb-free. Features PDFN3.3X3.3-8L D D D D 8 7 6 5 D 1 2 3 4 S S S G Internal schematic diagram ⚫ Split Gate Trench Technology ⚫ Supper high density cell design ⚫ Excellent ON resistance ⚫ Package PDFN3.3X3.