WNM03301D
Description
The WNM03301D is N-Channel enhancement MOS Field Effect Transistor. Uses advanced Split Gate Trench and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM03301D is Pb-free.
Features
PDFN3.3X3.3-8L
Internal schematic diagram
- Split Gate Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Package PDFN3.3X3.3-8L
Applications
- DC/DC converters
- CPU, GPU, Charger Switching MOS
- Power supply converters circuit
03301 = Device Code ND = Special Code Y = Year W = Week(A~z)
Marking
Order information
Device WNM03301D-8/TR
Package
Shipping
PDFN3333-8L 5000/Tape&Reel
Will Semiconductor Ltd.
2022/08/02- Rev.1.0
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current e Pulsed Drain Current c Continuous Drain Current Avalanche...
