WNM2046C - MOSFET

WillSEMI

General Description

The WPM2046C is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance.
Extremely Low Threshold Voltage.
Small package DFN1006-3L.

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WNM2046C mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM2046C
Manufacturer	WillSEMI
File Size	911.41 KB
Description	MOSFET
Datasheet	WNM2046C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2046C Single N-Channel, 20V, 0.6A, Power MOSFET VDS (V) 20 Typical RDS(on) (Ω) 0.42 @ VGS =4.5V 0.58 @ VGS=2.5V 0.84 @ VGS=1.8V Descriptions The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free. WNM2046C Http://www.willsemi.