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WNM3030 - Single N-Channel Power MOSFET

Datasheet Summary

Description

The WNM3030 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package PDFN3X3-8L-EP 8 8 Pin configuration (Top view) 8 8 8 8 8 8.

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Datasheet preview – WNM3030

Datasheet Details

Part number WNM3030
Manufacturer WillSEMI
File Size 1.06 MB
Description Single N-Channel Power MOSFET
Datasheet download datasheet WNM3030 Datasheet
Additional preview pages of the WNM3030 datasheet.

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Full PDF Text Transcription

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WNM3030 Single N-Channel, 30V, 13A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 5.5 @ VGS= 10V 8.5 @ VGS= 4.5V WNM3030 Http://www.sh-willsemi.com Descriptions The WNM3030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3030 is Pb-free.
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