WNM3030 - Single N-Channel Power MOSFET

WillSEMI

General Description

The WNM3030 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance.
Extremely Low Threshold Voltage.
Small package PDFN3X3-8L-EP 8 8 Pin configuration (Top view) 8 8 8 8 8 8.

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WNM3030 single n-channel power mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM3030
Manufacturer	WillSEMI
File Size	1.06 MB
Description	Single N-Channel Power MOSFET
Datasheet	WNM3030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3030 Single N-Channel, 30V, 13A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 5.5 @ VGS= 10V 8.5 @ VGS= 4.5V WNM3030 Http://www.sh-willsemi.com Descriptions The WNM3030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3030 is Pb-free.