WNM3030 Description
WNM3030 Single N-Channel, 30V, 13A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 5.5 @ VGS= 10V 8.5 @ VGS= 4.5V WNM3030 Http://.sh-willsemi. Descriptions The WNM3030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
WNM3030 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package PDFN3X3-8L-EP