WNM3057B - Single N-Channel 30V 80A Power MOSFET

WillSEMI

General Description

The WNM3057B is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance.
Extremely Low Threshold Voltage.
Small package PDFN3333-8L 3057 VBYW 3057 VB Y W =Device Code = Special Code = Year = Week(A~z).

📥 Download Datasheet

WNM3057B single n-channel 30v 80a power mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM3057B
Manufacturer	WillSEMI
File Size	835.92 KB
Description	Single N-Channel 30V 80A Power MOSFET
Datasheet	WNM3057B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WNM3003	N-Channel MOSFET	Will Semiconductor
WNM3008	N-Channel MOSFET	Will Semiconductor
WNM3011	N-Channel MOSFET	Will Semiconductor
WNM3013	N-Channel MOSFET	Will Semiconductor
WNM3062A	30V 18.5A Single N-Channel Power MOSFET	Will Semiconductor

Other Datasheets by WillSEMI

Part Number	Description
WNM3017	MOSFET
WNM3018	MOSFET
WNM3019	MOSFET
WNM3025	MOSFET
WNM3030	Single N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WNM3057B Single N-Channel, 30V, 80A, Power MOSFET VDS (V) 30 Max. RDS(on) (mΩ) 4.4 @ VGS=10V 6.3 @ VGS=4.5V WNM3057B http://www.omnivision-group.com/ Descriptions The WNM3057B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3057B is in compliance with RoHS.