WNM3057B Description
WNM3057B Single N-Channel, 30V, 80A, Power MOSFET VDS (V) 30 Max. RDS(on) (mΩ) 4.4 @ VGS=10V 6.3 @ VGS=4.5V WNM3057B http://.omnivision-group./ Descriptions The WNM3057B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
WNM3057B Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package PDFN3333-8L