WNMD2182 - MOSFET

WillSEMI

General Description

The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package PDFN2.9×2.8-8L.
ESD Protected Class-2 （HBM 2000V）.

📥 Download Datasheet

WNMD2182 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNMD2182
Manufacturer	WillSEMI
File Size	734.32 KB
Description	MOSFET
Datasheet	WNMD2182 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2182 WNMD2182 Dual N-Channel, 20V, 9.5A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) (mΩ) 12@ VGS=4.5V 20 14@ VGS=3.1V 17@ VGS=2.5V ESD HBM 2000V PDFN2.9×2.8-8L Descriptions The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2182 is Pb-free and Halogen-free. D2 D2 D1 D1 8 7 65 1 23 4 S2 G2 S1 G1 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.