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WPM3401 - MOSFET

Description

The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize onstate resistance.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Small package SOT-23-3L.

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Datasheet Details

Part number WPM3401
Manufacturer WillSEMI
File Size 798.09 KB
Description MOSFET
Datasheet download datasheet WPM3401 Datasheet

Full PDF Text Transcription

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WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET VDS (V) -30 Max RDS (on) (mΩ) 53@ VGS=-10V 56@ VGS=-4.5V WPM3401 www.sh-willsemi.com Descriptions The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize onstate resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
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