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WPM4801 - MOSFET

General Description

The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • z-30V/-5.0A,RDS(ON)= 37mȍ@VGS= - 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS= - 4.5V zSuper high density cell design for extremely low RDS (ON) zExceptional on-resistance and maximum DC current capability zSOP.
  • 8P package design.

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Datasheet Details

Part number WPM4801
Manufacturer WillSEMI
File Size 806.53 KB
Description MOSFET
Datasheet download datasheet WPM4801 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM4801 P-Channel Enhancement Mode MOSFET Description The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . Features z-30V/-5.0A,RDS(ON)= 37mȍ@VGS= - 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS= - 4.