Datasheet4U Logo Datasheet4U.com

WPM5001 - MOSFET

Description

The WPM5001 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • SOT-23 Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

📥 Download Datasheet

Datasheet Details

Part number WPM5001
Manufacturer WillSEMI
File Size 397.43 KB
Description MOSFET
Datasheet download datasheet WPM5001 Datasheet

Full PDF Text Transcription

Click to expand full text
WPM5001 Single P-Channel, -50V, -0.3A, Power MOSFET VDS (V) -50 Typical Rds(on) (Ω) 3.0@ VGS= –10V 3.5@ VGS= –5V WPM5001 Http//:www.sh-willsemi.com Descriptions The WPM5001 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM5001 is Pb-free and Halogen-free. Features SOT-23 Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.
Published: |