WSB5511M
WSB5511M is Schottky Barrier Diode manufactured by WillSEMI.
Features
- Low forward voltage
- Extremely low thermal resistance
- High current capability
Applications
- Switching circuit
- Middle current rectification
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (DC) Forward Peak Surge Current (1) Junction temperature Operating temperature Storage temperature
Http://.sh-willsemi.
SMA (DO-214AC)
Circuit
Symbol VRRM VR IO IFSM TJ Topr Tstg
Marking
Value 40 40 3.0 50
-55 ~ 150 -55 ~ 150 -55 ~ 150
Unit V V A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter
Symbol
Condition
Forward voltage (2) Reverse current Junction capacitance Thermal resistance
VF IR CJ Rθ(J-L)
IF=3.0A VR=40V VR=4V, F=1MHz Junction to Lead (Fig.2)
Min.
Typ.
220 17
Max. 0.50 0.5
Unit V m A p F
K/W
Order Informations
Device WSB5511M-2/TR
Package SMA (DO-214AC)
Marking .EC- (3)
Shipping 5000/Reel&Tape
Note1: Pulse...
