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WSB5558N - Schottky Barrier Diode

Features

  • 100mA Average rectified forward current.
  • Low forward voltage.
  • Low leakage current.
  • Small package DFN1006-2L.

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Datasheet Details

Part number WSB5558N
Manufacturer WillSEMI
File Size 0.96 MB
Description Schottky Barrier Diode
Datasheet download datasheet WSB5558N Datasheet

Full PDF Text Transcription

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WSB5558N Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package DFN1006-2L Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5558N Http://www.sh-willsemi.
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