WSB5558N
WSB5558N is Schottky Barrier Diode manufactured by WillSEMI.
Features
- 100m A Average rectified forward current
- Low forward voltage
- Low leakage current
- Small package DFN1006-2L
Applications
- Low Current rectification
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature
Http://.sh-willsemi.
DFN1006-2L
Circuit
Symbol VRM VR IO IFSM TJ Topr Tstg
Marking Value
30 30 100 1 150 -40 ~ 125 -40 ~ 150
Unit V V m A A OC OC OC
Electronics characteristics (TA=25o C)
Parameter
Symbol
Condition
Reverse Voltage Forward Voltage
Reverse current Junction capacitance Thermal Resistance
VR VF
IR CJ Rθ(JA)
IR=100u A IF=10m A IF=100m A VR=10V VR=30V VR=5V, F=1MHz Junction to Ambient
Order Informations
Device WSB5558N-2/TR
Package DFN1006-2L
Min. 30
Typ. 21
Max. Unit
0.32 0.45 15 30
V V u A u A p F...
