SFF10N60 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V.
Ultra-low Gate Charge(34nC).
Fast Switching Capability.
100%Avalanche Tested.
Improved dv/dt capability SFF10N60 Silicon N-Channel MOSFET General.

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SFF10N60 silicon n-channel mosfet by WinSemi - Datasheet Preview

Datasheet Details

Part number	SFF10N60
Manufacturer	WinSemi
File Size	574.29 KB
Description	Silicon N-Channel MOSFET
Datasheet	SFF10N60 Datasheet

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Full PDF Text Transcription (Reference)

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Features � 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability SFF10N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half bridge.