SFF10N60 Datasheet | WinSemi

Features - 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V - Ultra-low Gate Charge(34nC) - Fast Switching Capability - 100%Avalanche Tested - Improved dv/dt capability Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half...