SFF10N60 Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half bridge.
SFF10N60 Key Features
- 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V
- Ultra-low Gate Charge(34nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Improved dv/dt capability