GENERAL DESCRIPTION
The device is designed to be programmed and erased in system with the standard system 5 Volt Vcc supply. An external 12.0 Volts Vpp is not required for program and erase operation. The device can also be reprogrammed in standard EPROM programmers. The BM29F040 offers access times between 70 to 150 nS. The device has separate chip enable ( CE ), write enable ( WE ) and output enable ( OE ) controls to eliminate bus contention. BMI flash memory technology reliably stores memory information even after 100,000 erase and program cycles. The BMI proprietary cell technology