Winbond Electronics Corporation W19B160BT
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M × 8 or 1M × 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0.| Part No. | W19B160BT |
|---|---|
| Datasheet | W19B160BT Download |
| Manufacturer |  Winbond Electronics Corporation |
| Description | CMOS flash memory |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The can also be programmed and erased by using standard EPROM programmers. 2.FEATURES
Performance● 2.7~3.6-volt write (program and erase) operations
● Fast write operation − Sector erase time: 0.7s (Typical) − Chip erases time: 25 s (Typical) − Byte/Word programming time: 5/7 µs (Typical)
● Read access time: 70 ns
● Typical program/erase cycles: − 100K
● Twenty-year data retention
● Ultra low power consumption − Active current (Read): 9mA (Typical) − Active current (Program/erase): 20mA (Typical) − Standby current: 0.2 μA (Typical) Architecture
● Sector erases architecture − One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors − Top or bottom boot block configurations available − Supports full chip erase
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