The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 × 8 bits that operates on a single 5 volt power supply.
The W27E010 provides an electrical chip erase function.
Key Features
High speed access time: 45/55/70/90/120 nS (max. ).
Read operating current: 30 mA (typ. ).
Erase/Programming operating current:
1 mA (typ. ).
Full PDF Text Transcription for W27E010 (Reference)
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W27E010 128K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized ...
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wer Electrically Erasable and Programmable Read Only Memory organized as 131072 × 8 bits that operates on a single 5 volt power supply. The W27E010 provides an electrical chip erase function. FEATURES • High speed access time: 45/55/70/90/120 nS (max.) • Read operating current: 30 mA (typ.) • Erase/Programming operating current: 1 mA (typ.) • Standby current: 5 µA (typ.
W27E010 Datasheet
