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W29C040 - 512K X 8 CMOS FLASH MEMORY

General Description

The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits.

The device can be written (erased and programmed) in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Key Features

  • Single 5-volt write (erase and program) operations Fast page-write operations.
  • 256 bytes per page.
  • Page write (erase/program) cycle: 5 mS (typ. ).
  • Effective byte-write (erase/program) cycle time: 19.5 µS.
  • Optional software-protected data write.
  • Software and hardware data protection Low power consumption.
  • Active current: 25 mA (typ. ).
  • Standby current: 20 µA (typ. ).
  • Automatic write (.

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Datasheet Details

Part number W29C040
Manufacturer Winbond
File Size 261.39 KB
Description 512K X 8 CMOS FLASH MEMORY
Datasheet download datasheet W29C040 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W29C040 512K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/ program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers. FEATURES • • Single 5-volt write (erase and program) operations Fast page-write operations − 256 bytes per page − Page write (erase/program) cycle: 5 mS (typ.) − Effective byte-write (erase/program) cycle time: 19.