Datasheet4U Logo Datasheet4U.com

W49F201 - 128K X 16 CMOS FLASH MEMORY

Download the W49F201 datasheet PDF. This datasheet also covers the W49F variant, as both devices belong to the same 128k x 16 cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits.

The device can be programmed and erased in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Key Features

  • Single 5-volt operations:.
  • 5-volt Read/Erase/Program Fast Program operation:.
  • Word-by-Word programming: 50 µS (max. ) Fast Erase operation: 60 mS (typ. ) Fast Read access time: 45/55 nS Endurance: 1K/10K cycles (typ. ) Ten-year data retention Hardware data protection Sector configuration.
  • One 8K words boot block with lockout protection.
  • Two 8K words parameter blocks.
  • One 104K words (208K bytes) Main Memory Array Blocks.
  • Low power co.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (W49F-201.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number W49F201
Manufacturer Winbond
File Size 267.48 KB
Description 128K X 16 CMOS FLASH MEMORY
Datasheet download datasheet W49F201 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary W49F201 128K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt operations: − 5-volt Read/Erase/Program Fast Program operation: − Word-by-Word programming: 50 µS (max.) Fast Erase operation: 60 mS (typ.) Fast Read access time: 45/55 nS Endurance: 1K/10K cycles (typ.