Datasheet4U Logo Datasheet4U.com

W55F10 - SERIAL FLASH EEPROM SERIES

This page provides the datasheet information for the W55F10, a member of the W55 SERIAL FLASH EEPROM SERIES family.

Datasheet Summary

Description

The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series.

The single voltage supply eliminates the need for an extra pump circuit during programming and erasing.

Features

  • Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series 512K/1M/2M memory sizes available Directly cascadable for longer duration Fast frame-write operation.
  • Frame (32 bits) program cycle time: 400 µS (typ. ) Fast whole-chip-erase duration: 50 mS (max. ) Read data access time: 500 nS (max. ) Program/erase cycles: 10,000 (typ. ) Data retention: 10 years (typ. ) Low power consumption:.
  • Operating: 5 mA (typ. ).
  • Sta.

📥 Download Datasheet

Datasheet preview – W55F10

Datasheet Details

Part number W55F10
Manufacturer Winbond
File Size 75.36 KB
Description SERIAL FLASH EEPROM SERIES
Datasheet download datasheet W55F10 Datasheet
Additional preview pages of the W55F10 datasheet.
Other Datasheets by Winbond

Full PDF Text Transcription

Click to expand full text
W55FXX SERIAL FLASH EEPROM SERIES GENERAL DESCRIPTION The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series. The single voltage supply eliminates the need for an extra pump circuit during programming and erasing. FEATURES • • • • Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series 512K/1M/2M memory sizes available Directly cascadable for longer duration Fast frame-write operation − Frame (32 bits) program cycle time: 400 µS (typ.) Fast whole-chip-erase duration: 50 mS (max.) Read data access time: 500 nS (max.) Program/erase cycles: 10,000 (typ.) Data retention: 10 years (typ.) Low power consumption: − Operating: 5 mA (typ.
Published: |