W947D2HB Datasheet PDF | Winbond Electronics Corporation

Winbond Electronics Corporation W947D2HB

W947D2HB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM), An access to the LPDDR SDRAM is burst oriented. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time.

Part No.	W947D2HB
Datasheet	W947D2HB Download
Manufacturer	Winbond Electronics Corporation
Description	128Mb Mobile LPDDR
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GENERAL DESCRIPTION

128Mb Mobile LPDDR W947D6HB / Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. By setting programmable Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). 2.

FEATURES

VDD = 1.7~1.95V VDDQ = 1.7~1.95V; Data width: x16 / x32 Clock rate: 200MHz(-5),166MHz(-6),133MHz(-75) Partial Array Self-Refresh(PASR) Auto Temperature Compensated Self-Refresh(ATCSR) Power Down Mode Deep Power Down Mode (DPD Mode) Programmable output buffer driver strength Four internal banks for concurren...