Winbond Electronics Corporation W949D2KB
W949D2KB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM), An access to the LPDDR SDRAM is burst oriented. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time.| Part No. | W949D2KB |
|---|---|
| Datasheet | W949D2KB Download |
| Manufacturer |  Winbond Electronics Corporation |
| Description | 512Mb Mobile LPDDR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
W949D6KB / Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. By setting programmable Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). 2.FEATURES
● VDD = 1.7~1.95V● VDDQ = 1.7~1.95V
● Data width: x16 / x32
● Clock rate: 200MHz (-5),166MHz (-6)
● Standard Self Refresh Mode
● Partial Array Self-Refresh (PASR)
● Auto Temperature Compensated Self Refresh (ATCSR)
● Power Down Mode
● Deep Power Down Mode (DPD Mode)
● Programmable output buffer driver strength
● Four interna...
