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W967D6HB Datasheet Cellularram

Manufacturer: Winbond

Overview: W967D6HB 1. GENERAL.

General Description

128Mb Async./Page,Syn./Burst CellularRAM Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The device has a DRAM core organized.

These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth pared with other lowpower SRAM or Pseudo SRAM offerings.

Key Features

  • Supports asynchronous, page, and burst operations.
  • VCC, VCCQ Voltages: 1.7V.
  • 1.95V VCC 1.7V.
  • 1.95V VCCQ.
  • Random access time: 70ns.
  • Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
  • Page mode READ access:.
  • Sixteen-word page size.
  • Interpage READ access: 70ns Intrapage READ access: 20ns.
  • Low-power features On-chip tempe.

More Datasheets from Winbond

Part Number Description
W963A6BBN 512K WORD x 16-BIT LOW POWER PSEUDO SRAM
W966K6HB CellularRAM
W968D6DA CellularRAM

W967D6HB Distributor