W967D6HB Description
128Mb Async./Page,Syn./Burst CellularRAM Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth pared with other lowpower SRAM or Pseudo SRAM offerings.
W967D6HB Key Features
- Supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages
- Random access time: 70ns
- Burst mode READ and WRITE access
- Page mode READ access
- Sixteen-word page size
- Interpage READ access: 70ns
- Low-power features On-chip temperature pensated refresh (TCR) Partial array refresh (PAR) Deep power-down (DPD) mode
- Package: 54 Ball VFBGA
- Active current (ICC1) <35mA at 85°C
W967D6HB Applications
- Supports asynchronous, page, and burst operations