W967D6HB - CellularRAM

Product Overview

Winbond

Part number	W967D6HB
Manufacturer	Winbond
File Size	1.29 MB
Description	CellularRAM
Datasheet	W967D6HB Datasheet
Additional preview pages of the W967D6HB datasheet.

Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The device has a DRAM core organized.

Supports asynchronous, page, and burst operations.
VCC, VCCQ Voltages: 1.7V.
1.95V VCC 1.7V.
1.95V VCCQ.
Random access time: 70ns.
Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
Page mode READ access:.
Sixteen-word page size.
Interpage READ access: 70ns Intrapage READ access: 20ns.
Low-power features On-chip tempe.

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Published: Feb 17, 2016 |