W967D6HB - CellularRAM

Product Overview

Winbond

Datasheet Details

Part number	W967D6HB
Manufacturer	Winbond
File Size	1.29 MB
Description	CellularRAM
Datasheet	W967D6HB Datasheet
Additional preview pages of the W967D6HB datasheet.

Product details

Description

128Mb Async./Page,Syn./Burst CellularRAM Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.The device has a DRAM core organized.These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh

Features

Supports asynchronous, page, and burst operations.
VCC, VCCQ Voltages: 1.7V.
1.95V VCC 1.7V.
1.95V VCCQ.
Random access time: 70ns.
Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
Page mode READ access:.
Sixteen-word page size.
Interpage READ access: 70ns Intrapage READ access: 20ns.
Low-power features On-chip tempe.

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Published: Feb 17, 2016 |