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W968D6DA - CellularRAM

General Description

Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The device has a DRAM core organized.

Key Features

  • Supports asynchronous, page, and burst operations.
  • VCC, VCCQ Voltages: 1.7V.
  • 1.95V VCC 1.7V.
  • 1.95V VCCQ.
  • Random access time: 70ns.
  • Burst mode READ and WRITE access:.
  • Configuration: 256Mb 16Mx16 Vcc core voltage supply: 1.8V VccQ I/O voltage supply: 1.8V.
  • Package: 54 Ball VFBGA 4, 8, 16, or 32 words, or continuous burst.
  • Active current (ICC1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings. To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device READ/WRITE performance. Two user-accessible control registers define device operation.