W968D6DA Description
Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth pared with other lowpower SRAM or Pseudo SRAM offerings.
W968D6DA Key Features
- Supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages
- Random access time: 70ns
- Burst mode READ and WRITE access
- Configuration: 256Mb 16Mx16 Vcc core voltage supply: 1.8V VccQ I/O voltage supply: 1.8V
- Package: 54 Ball VFBGA
- Active current (ICC1) <25mA at 85°C
- Page mode READ access
- Standby current 400μA (max) at 85°C
- Deep power-down: Typical 25μA -Operating temperature range: -40°C ~ 85°C
W968D6DA Applications
- Supports asynchronous, page, and burst operations