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W979H6KB Datasheet PDF

Winbond Electronics Corporation W979H6KB

The 10-bit CA bus contains command, address, and Bank/Row Buffer information. Each command uses one clock cycle, during which command information is transferred on both the positive and negative edge of the clock.
Part No. W979H6KB
Datasheet W979H6KB Download
Manufacturer
Winbond Electronics Corporation
Description a high-speed SDRAM
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W979H6KB datasheet page 1 preview

GENERAL DESCRIPTION

LPDDR2 is a high-speed SDRAM device internally configured as a 4-Bank memory. These devices contains 512Mb has 536,870,912 bits. All LPDDR2 devices use a double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. For LPDDR2 devices, accesses begin with the registration of an Activate command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Activate command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access. 2.

FEATURES

● VDD1 = 1.7~1.95V
● VDD2/VDDCA/VDDQ = 1.14V~1.30V
● Data width: x16 / x32
● Clock rate: up to 533 MHz
● Data rate: up to 1066 Mbps
● Four-bit prefetch DDR architecture
● Four internal banks
● Programmable READ and WRITE latencies (RL/WL)
● Programmable burst lengths: 4, 8, or 16
● Auto r...
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