W989D2KB Datasheet | Winbond

W989D6KB / W989D2KB 1. GENERAL DESCRIPTION 512Mb Mobile LPSDR The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power Features essential for applications which use batteries. It is available in two organizations: 4,194,304-words × 4 banks × 32 bits or 8,388,608 words × 4 banks × 16 bits. The device operates in a fully synchronous mode, and the output data are synchronized to positive edges of the system clock and is capable of delivering data at clock rate up to 166MHz. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature pensated Self Refresh (ATCSR). The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile game consoles and other handheld applications where large memory density and low power consumption are required. The device operates from 1.8V power supply, and supports the 1.8V LVCMOS bus interface. 2. Features - Power supply VDD = 1.7V~1.95V - VDDQ = 1.7V~1.95V - Frequency : 166MHz(-6) - Standard Self Refresh Mode - Programmable Partial Array Self Refresh - Power Down Mode - Deep Power Down Mode (DPD) - Programmable output buffer driver strength - Automatic Temperature pensated Self Refresh - CAS Latency: 2 and 3 - Burst Length: 1, 2, 4, 8, and full page - Refresh: refresh cycle 64ms - Interface: LVCMOS - Support package : 54 balls VFBGA (x16) 90 balls VFBGA (x32) - Operating Temperature Range Extended (-25°C ~ +85°C) Industrial (-40°C ~ +85°C) -1- Publication Release Date : October 07, 2013 Revision : A01-003 3. ORDERING INFORMATION W989D6KB / W989D2KB 512Mb Mobile LPSDR Part Number VDD/VDDQ W989D6KBGX6I 1.8V/1.8V W989D6KBGX6E 1.8V/1.8V W989D2KBJX6I 1.8V/1.8V W989D2KBJX6E...