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PFB110N10S - N-Channel Super Junction MOSFET

Features

  •  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFB110N10S
Manufacturer Wing On
File Size 847.60 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFB110N10S Datasheet
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Full PDF Text Transcription

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PFP110N10S / PFB110N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V APPLICATION  DC Motor control for E-bike & Power tools  Amplifier and car booster  Load Switch  DC-DC converters PFP110N10S/PFB110N10S 100V N-Channel MOSFET BVDSS = 100 V RDS(on) = 6.5 mΩ ID = 117 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 1 2 3 1.Gate 2. Drain 3. Source D2-PAK 2 1 3 1.Gate 2. Drain 3.
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