Wing On PFD60R540G
N-Channel Super Junction MOSFET
FEATURES
● New technology for high voltage device● Low RDS(on) low conduction losses
● Small package
● Ultra low gate charge cause lower driving requirement
● 100% avalanche tested
● Halogen Free APPLICATION
● Power Factor Correction(PFC)
● Switched mode power supply (SMPS)
● Uninterruptible Power Supply (UPS) BVDSS = 600 V RDS(on) = 0.48 Ω ID = 8.0 A Drain Gate
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● Source I-PAK(TO-251) D-PAK(TO-252) G D S G S D
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 600 8.0 5.2 24 ±30 EAS Single Pulsed Avalanche Energy * Note 2 185 IAR Avalanche Current * Note 1 4.0 EAR dv/dt PD TJ, TSTG