Wing On PFD70R360G
N-Channel Super Junction MOSFET
FEATURES
● New technology for high voltage device● Low RDS(on) low conduction losses
● Small package
● Ultra low gate charge cause lower driving requirement
● 100% avalanche tested
● Halogen Free BVDSS = 700 V RDS(on) = 0.36 Ω ID = 11.0 A Drain Gate
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● Source I-PAK(TO-251) D-PAK(TO-252) APPLICATION
● Power Factor Correction(PFC)
● Switched mode power supply (SMPS)
● Uninterruptible Power Supply (UPS) G D S G S D
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise specified Symbol Parameter Value VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25oC) Drain Current – Continuous (TC = 100oC) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 700 11 7.0 33 ±30 EAS Single Pulsed Avalanche Energy * Note 2 60 IAR Avalanche Current * Note 1 5.5 EAR dv/dt PD TJ, TSTG Re