PFF2N60 Datasheet | Wing On

Aug 2006 PFP2N60 / PFF2N60 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP2N60 / PFF2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2.0 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3....