Wing On PFF3N80
N-Channel MOSFET
FEATURES
● Originative New Design● 100% EAS Test
● Rugged Gate Oxide Technology
● Extremely Low Intrinsic Capacitances
● Remarkable Switching Characteristics
● Unequalled Gate Charge : 15 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V APPLICATION
● Low power battery chargers
● Switch mode power supply (SMPS)
● AC adaptors PFP3N80/PFF3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 4.8 Ω ID = 3.0 A TO-220 Drain Gate
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● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PFP3N80 PFF3N80 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) R