Wing On PFF65R540
N-Channel Super Junction MOSFET
FEATURES
● New technology for high voltage device● Low RDS(on) low conduction losses
● Small package
● Ultra low gate charge cause lower driving requirement
● 100% avalanche tested
● RoHS APPLICATION
● Power Factor Correction(PFC)
● Switched mode power supply (SMPS)
● Uninterruptible Power Supply (UPS) BVDSS = 650 V RDS(on) = 0.48 Ω ID = 8.0 A Drain Gate
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● Source TO-220 TO-220F G DS G DS
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PFP65R540 PFF65R540 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 650 8.0 8.0* 5.2 5.2* 24 24* ±30 EAS Single Pulsed Avalanche Energy * Note 2 185 IAR Avalanche Current * Note 1 4.0 EAR dv/dt PD TJ, TSTG Repetitive Av