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PFF65T360 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate .
  • ◀▲.
  •  Source TO-220 TO-220F.

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Datasheet Details

Part number PFF65T360
Manufacturer Wing On
File Size 567.28 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFF65T360 Datasheet

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Full PDF Text Transcription

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PFP65T360 / PFF65T360 PFP65T360 / PFF65T360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.
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