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PFI6N90EG - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.9Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFI6N90EG
Manufacturer Wing On
File Size 862.41 KB
Description N-Channel MOSFET
Datasheet download datasheet PFI6N90EG Datasheet

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Full PDF Text Transcription

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PFI6N90EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.9Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFI6N90EG 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 1.9 Ω ID = 5.7 A TO-262-3L Drain  Gate  ● ◀▲ ● ●  Source 1 2 3 1.Gate 2. Drain 3.
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