PFM1N60 Datasheet | Wing On

June 2007 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 10.5 Ω ID = 1.0- A Drain  Gate  - ◀▲ - -  Source TO-92 12 3 1.Gate 2. Drain 3....