PFP6N70E Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP6N70E/PFF6N70E 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.80 Ω ID = 6.0 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP6N70E PFF6N70E VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) Drain Current - Pulsed (Note 1) Gate-Source...