PGJ15GD120 Description
Using advanced Trench NPT technology, WOS’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Ratings Symbol Description VCES VGES IC ICM(1) IF IFM PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current @TC=25°C Continuous Collector Current...